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RDN100N20FU6 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Mosfet n-Ch 200V 10A To-220fn

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RDN100N20FU6 Datasheet PDF (5 Pages)

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RDN100N20FU6 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-220-3

Power Dissipation

35W (Tc)

Drain to Source Voltage (Vds)

200 V

Input Capacitance (Ciss)

543pF @10V(Vds)

Input Power (Max)

35 W

Power Dissipation (Max)

35W (Tc)

RDN100N20FU6 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not For New Designs

Packaging

Bulk

Operating Temperature

150℃ (TJ)

RDN100N20FU6 Environmental

RDN100N20FU6 Function Overview

RDN100N20FU6 Documents

RDN100N20FU6 Other Datasheet PDF

ROHM Semiconductor

5 Pages / 0.08 MByte

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RDN100N20FU6 Datasheet PDF

ROHM Semiconductor

Mosfet n-Ch 200V 10A To-220fn

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