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Part Datasheet Search > MOSFETs > ON Semiconductor > RFD3055LE Datasheet PDF
RFD3055LE
$ 0.747
RFD3055LE Datasheet PDF (8 Pages)
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RFD3055LE Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
107 mΩ
Power Dissipation
38 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
60 V
Rise Time
105 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
38 W
Fall Time
39 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
38000 mW

RFD3055LE Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Material
Silicon

RFD3055LE Documents

ON Semiconductor
8 Pages / 1.33 MByte
ON Semiconductor
9 Pages / 1.15 MByte
ON Semiconductor
2 Pages / 0.55 MByte

RFD3055 Documents

Fairchild
MOSFET Power MOSFET N-Ch 60V/12A/0.15Ω
Harris
12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)
Intersil
12A/ 60V/ 0.15Ω/ N-Channel Power MOSFETs
ON Semiconductor
MOSFET N-CH 60V 12A IPAK
Fairchild
Trans MOSFET N-CH 60V 11A 3Pin(2+Tab) DPAK T/R
Fairchild
N-Channel 60V 0.107Ω Through Hole Logic Level Power Mosfet - TO-251AA
ON Semiconductor
Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK Rail
ON Semiconductor
Trans MOSFET N-CH Si 60V 11A 3Pin(3+Tab) IPAK Rail
Fairchild
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) TO-252AA
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