Part 3D Model

$ 0.054

RFN1LAM6STR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Case Package:

SOD-128

Description:

DIODE GEN PURP 600V 800mA PMDTM

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

RFN1LAM6STR Datasheet (8 Pages)

RFN1LAM6STR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

2 Pin

Case/Package

SOD-128

Forward Voltage

1.45V @800mA

Reverse recovery time

35 ns

Forward Current

800 mA

Max Forward Surge Current (Ifsm)

15 A

Maximum Forward Voltage (Max)

1.45 V

Forward Current (Max)

0.8 A

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature

150℃ (Max)

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RFN1LAM6STR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Material

Silicon

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RFN1LAM6STR Environmental

RFN1LAM6STR Function Overview

RFN1LAM6STR Documents

RFN1LAM6STR Datasheet

ROHM Semiconductor

8 Pages / 0.63 MByte

RFN1LAM6STR Other Datasheet PDF

ROHM Semiconductor

8 Pages / 0.75 MByte

RFN1LAM6 Documents

RFN1LAM6STR Datasheet PDF

ROHM Semiconductor

DIODE GEN PURP 600V 800mA PMDTM

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