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RGC80TSX8RGC11 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Case Package:

TO-247-3

Description:

IGBT

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RGC80TSX8RGC11 Datasheet PDF

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RGC80TSX8RGC11 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-247-3

Number of Positions

3 Position

Power Dissipation

535 W

Breakdown Voltage (Collector to Emitter)

1800 V

Input Power (Max)

535 W

Operating Temperature (Max)

175 ℃

RGC80TSX8RGC11 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-40℃ ~ 175℃ (TJ)

RGC80TSX8RGC11 Environmental

RGC80TSX8RGC11 Function Overview

RGC80TSX8RGC11 Documents

RGC80TSX8RGC11 Other Datasheet PDF

ROHM Semiconductor

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RGC80TSX8 Documents

RGC80TSX8RGC11 Datasheet PDF

ROHM Semiconductor

IGBT

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