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Part Datasheet Search > IGBTs > Renesas Electronics > RJH60F5DPQ-A0#T0 Datasheet PDF
RJH60F5DPQ-A0#T0
$ 4.615
RJH60F5DPQ-A0#T0 Datasheet PDF (2 Pages)
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RJH60F5DPQ-A0#T0 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
260.4 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
90 ns
Input Power (Max)
260.4 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
260400 mW

RJH60F5DPQ-A0#T0 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.94 mm
Size-Width
5.02 mm
Size-Height
21.13 mm
Operating Temperature
150℃ (TJ)

RJH60F5DPQ-A0#T0 Documents

Renesas Electronics
2 Pages / 0.07 MByte

RJH60F5DPQA0 Documents

Renesas Electronics
Trans IGBT Chip N-CH 600V 80A 260400mW 3Pin(3+Tab) TO-247A
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