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Part Datasheet Search > Transistors > Toshiba > RN4984FE Datasheet PDF
RN4984FE
$ 0.037

RN4984FE Specifications

TYPE
DESCRIPTION
Case/Package
ES-6
Polarity
NPN+PNP
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
100mA

RN4984FE Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

RN4984FE Documents

Toshiba
6 Pages / 0.26 MByte
Toshiba
6 Pages / 0.27 MByte
Toshiba
6 Pages / 0.3 MByte

RN4984 Documents

Toshiba
US NPN+PNP 50V 100mA
Toshiba
US NPN+PNP 50V 100mA
Toshiba
ES NPN+PNP 50V 100mA
Toshiba
US NPN+PNP 50V 100mA
Toshiba
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Toshiba
Toshiba Transistor Silicon Npn/pnp Epitaxial Type Pct Process Transistor With Built-in Bias Resistor
Toshiba
Trans Npn/Pnp Prebias 0.1W(1/10W) Es6
Toshiba
fS NPN+PNP 20V 50mA
Toshiba
fS NPN+PNP 20V 50mA
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