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Part Datasheet Search > MOSFETs > ROHM Semiconductor > RQ3E120ATTB Datasheet PDF
RQ3E120ATTB
$ 0.203
RQ3E120ATTB Datasheet PDF (13 Pages)
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RQ3E120ATTB Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
TSMT-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0061 Ω
Polarity
P-Channel
Power Dissipation
20 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
12A
Rise Time
30 ns
Input Capacitance (Ciss)
3200pF @15V(Vds)
Fall Time
95 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta)

RQ3E120ATTB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3 mm
Size-Width
2.4 mm
Size-Height
0.85 mm
Operating Temperature
150℃ (TJ)

RQ3E120ATTB Documents

ROHM Semiconductor
13 Pages / 2.17 MByte
ROHM Semiconductor
13 Pages / 2.56 MByte

RQ3E120 Documents

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ROHM Semiconductor
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ROHM Semiconductor
ROHM RQ3E120BNTB MOSFET Transistor, N Channel, 12A, 30V, 0.0066Ω, 10V, 2.5V
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