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Part Datasheet Search > MOSFETs > ROHM Semiconductor > RQ3E120GNTB Datasheet PDF
RQ3E120GNTB
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RQ3E120GNTB Datasheet PDF (12 Pages)
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RQ3E120GNTB Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
HSMT-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0067 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30 V
Rise Time
4.5 ns
Input Capacitance (Ciss)
590pF @15V(Vds)
Fall Time
3.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta), 16W (Tc)

RQ3E120GNTB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

RQ3E120GNTB Documents

ROHM Semiconductor
12 Pages / 2.39 MByte
ROHM Semiconductor
13 Pages / 1.42 MByte

RQ3E120 Documents

ROHM Semiconductor
HSMT P-CH 30V 12A
ROHM Semiconductor
Trans MOSFET N-CH 30V 12A 8Pin HSMT T/R
ROHM Semiconductor
ROHM RQ3E120BNTB MOSFET Transistor, N Channel, 12A, 30V, 0.0066Ω, 10V, 2.5V
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