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RQ3E160ADTB Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

PowerVDFN-8

Description:

ROHM RQ3E160ADTB MOSFET Transistor, N Channel, 16A, 30V, 0.0035Ω, 10V, 2.5V

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RQ3E160ADTB Datasheet PDF (14 Pages)

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RQ3E160ADTB Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

PowerVDFN-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0035 Ω

Polarity

N-Channel

Power Dissipation

2 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Rise Time

30 ns

Input Capacitance (Ciss)

2550pF @15V(Vds)

Fall Time

45 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

RQ3E160ADTB Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

RQ3E160ADTB Environmental

RQ3E160ADTB Function Overview

RQ3E160ADTB Documents

RQ3E160ADTB Other Datasheet PDF

ROHM Semiconductor

14 Pages / 2.4 MByte

RQ3E160 Documents

RQ3E160ADTB Datasheet PDF

ROHM Semiconductor

ROHM RQ3E160ADTB MOSFET Transistor, N Channel, 16A, 30V, 0.0035Ω, 10V, 2.5V

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