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RQ3E180GNTB Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

HSMT-8

Description:

HSMT N-CH 30V 18A

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RQ3E180GNTB Datasheet PDF (11 Pages)

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RQ3E180GNTB Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

HSMT-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0033 Ω

Polarity

N-Channel

Power Dissipation

20 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

18A

Rise Time

6.9 ns

Input Capacitance (Ciss)

1520pF @15V(Vds)

Fall Time

10.2 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

RQ3E180GNTB Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

RQ3E180GNTB Environmental

RQ3E180GNTB Export Classifications

RQ3E180GNTB Function Overview

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