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RQ6E050AJTCR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

SOT-457-6

Description:

Mosfet, n-Ch, 30V, 5A, Tsmt-6

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RQ6E050AJTCR Datasheet PDF (14 Pages)

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RQ6E050AJTCR Specifications

TYPE

DESCRIPTION

Case/Package

SOT-457-6

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.026 Ω

Polarity

N-Channel

Power Dissipation

1.25 W

Threshold Voltage

1.5 V

Drain to Source Voltage (Vds)

30 V

Operating Temperature (Max)

150 ℃

RQ6E050AJTCR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

RQ6E050AJTCR Environmental

RQ6E050AJTCR Function Overview

RQ6E050AJTCR Documents

RQ6E050AJTCR Other Datasheet PDF

ROHM Semiconductor

14 Pages / 2.57 MByte

RQ6E050 Documents

RQ6E050ATTCR Datasheet PDF

ROHM Semiconductor

MOSFET Transistor, P Channel, -5A, -30V, 0.021Ω, -10V, -2.5V

RQ6E050AJTCR Datasheet PDF

ROHM Semiconductor

Mosfet, n-Ch, 30V, 5A, Tsmt-6

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