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RSD100N10TL
$ 0.609
RSD100N10TL Datasheet PDF (7 Pages)
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RSD100N10TL Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.095 Ω
Polarity
N-Channel
Power Dissipation
20 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
100 V
Rise Time
17 ns
Input Capacitance (Ciss)
700pF @25V(Vds)
Input Power (Max)
20 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
20W (Tc)

RSD100N10TL Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

RSD100N10TL Documents

ROHM Semiconductor
7 Pages / 0.56 MByte
ROHM Semiconductor
3 Pages / 0.09 MByte
ROHM Semiconductor
3 Pages / 0.07 MByte
ROHM Semiconductor
38 Pages / 10.45 MByte

RSD100N10 Documents

ROHM Semiconductor
Trans MOSFET N-CH 100V 10A 3Pin(2+Tab) CPT T/R
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