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Part Datasheet Search > MOSFETs > ROHM Semiconductor > RSJ650N10TL Datasheet PDF
RSJ650N10TL
$ 2.165
RSJ650N10TL Datasheet PDF (8 Pages)
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RSJ650N10TL Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
9.1 mΩ
Polarity
N-Channel
Power Dissipation
100 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
65A
Rise Time
170 ns
Input Capacitance (Ciss)
10780pF @25V(Vds)
Input Power (Max)
100 W
Fall Time
480 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
100W (Tc)

RSJ650N10TL Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

RSJ650N10TL Documents

ROHM Semiconductor
8 Pages / 0.88 MByte
ROHM Semiconductor
7 Pages / 0.52 MByte

RSJ650N10 Documents

ROHM Semiconductor
LPTS N-CH 100V 65A
ROHM Semiconductor
Mosfet, Aec-Q101, n-Ch, 100V, To-263
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