S29AL008J70BFI010 Datasheet PDF - Cypress Semiconductor

●The S29AL008J is a 8 Mbit, 3.0 Volt only Flash memory organized as 1,048,576 bytes or 524,288 words. The word wide data (x16) appears on DQ15-DQ0; the bytewide (x8) data appears on DQ7-DQ0. This device is designed to be programmed in system with the standard system 3.0V Vcc supply. A 12.0V Vpp or 5.0V Vcc are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

● Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

● Fully compatible with 200 nm S29AL008D

● One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)

● One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode)

● Unlock Bypass Program Command

● Top or Bottom Boot Block Configurations Available