●The S29JL064J70TFI000 is a 64MB CMOS simultaneous Read/Write Flash Memory organized as 4194304 words of 16-bit each or 8388608 bytes of 8-bit each. Word mode data appears on DQ15-DQ0, byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3VCC supply and can also be programmed in standard EPROM programmers. The device is available with an access time of 70ns. Standard control pins - chip enable (CE#), write enable (WE#) and output enable (OE#) - control normal read and write operations and avoid bus contention issues. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
● Standard configuration
● Data can be continuously read from one bank while executing erase/program functions in another bank
● Zero latency between read and write operations
● Flexible bank architecture
● Read may occur in any of the three banks not being programmed or erased
● Four banks may be grouped by customer to achieve desired bank divisions
● Top and bottom boot sectors in the same device
● Any combination of sectors can be erased
● Manufactured on 0.11µm process technology
● Secured silicon region - Extra 256-byte sector
● Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
● Compatible with JEDEC standards
● Pinout and software compatible with single-power-supply flash standard
● High performance
● Program time - 7µs/word typical using accelerated programming function
● Ultralow power consumption
● Cycling endurance - 1million cycles per sector typical
● Data retention - 20 years typical
● Supports common flash memory interface
● Erase suspend/erase resume
Part 3D Model
