SBC847BDW1T1G Datasheet PDF - ON Semiconductor

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN SBC847BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.