SCS220AGC Datasheet PDF - ROHM Semiconductor

●The SCS220AGC is a SiC epitaxial planer Schottky Barrier Diode features switching loss reduced, enabling high-speed switching and reduced temperature dependence. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature. The silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.

● Shorter recovery time

● 76A Repetitive peak forward current

● 130W Total power dissipation

● 600VDC Blocking voltage