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SCT2H12NZGC11 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-3

Description:

Silicon Carbide Power MOSFET, N Channel, 3.7A, 1.7kV, 1.15Ω, 18V, 2.8V

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Documentation:

SCT2H12NZGC11 Datasheet (14 Pages)SCT2H12NZGC11 Application Note (41 Pages)

SCT2H12NZGC11 Datasheet PDF (14 Pages)

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SCT2H12NZGC11 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.15 Ω

Polarity

N-Channel

Power Dissipation

35 W

Threshold Voltage

2.8 V

Drain to Source Voltage (Vds)

1.7 kV

Breakdown Voltage (Drain to Source)

1700 V

Rise Time

21 ns

Input Capacitance (Ciss)

184pF @800V(Vds)

Fall Time

74 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

35W (Tc)

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SCT2H12NZGC11 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

175℃ (TJ)

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SCT2H12NZGC11 Environmental

SCT2H12NZGC11 Export Classifications

SCT2H12NZGC11 Function Overview

SCT2H12NZGC11 Documents

SCT2H12NZGC11 Datasheet

ROHM Semiconductor

14 Pages / 0.76 MByte

SCT2H12NZGC11 Other Datasheet PDF

ROHM Semiconductor

15 Pages / 1.02 MByte

SCT2H12NZGC11 Application Note

ROHM Semiconductor

41 Pages / 0.88 MByte

SCT2H12 Documents

SCT2H12NZGC11 Datasheet PDF

ROHM Semiconductor

Silicon Carbide Power MOSFET, N Channel, 3.7A, 1.7kV, 1.15Ω, 18V, 2.8V

SCT2H12NYTB Datasheet PDF

ROHM Semiconductor

TO-268L N-CH 1700V 4A

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