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Part Datasheet Search > MOSFETs > ROHM Semiconductor > SCT3030ALGC11 Datasheet PDF
SCT3030ALGC11
$ 10.856

SCT3030ALGC11 Datasheet PDF - ROHM Semiconductor

Manufacturer:
ROHM Semiconductor
Category:
MOSFETs
Case Package:
TO-247-3
Description:
Trans MOSFET N-CH SiC 650V 70A 3Pin(3+Tab) TO-247N Tube
Pictures:
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Documentation:
SCT3030ALGC11 Datasheet (15 Pages)SCT3030ALGC11 Application Note (41 Pages)
SCT3030ALGC11 Datasheet PDF (15 Pages)
View Datasheet
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SCT3030ALGC11 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
30 mΩ
Power Dissipation
262 W
Threshold Voltage
5.6 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Rise Time
41 ns
Input Capacitance (Ciss)
1526pF @500V(Vds)
Fall Time
27 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
262W (Tc)
View Datasheet >

SCT3030ALGC11 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
175℃ (TJ)
View Datasheet >

SCT3030ALGC11 Documents

SCT3030ALGC11 Datasheet
ROHM Semiconductor
15 Pages / 1.06 MByte
SCT3030ALGC11 Other Datasheet PDF
ROHM Semiconductor
15 Pages / 1.06 MByte
SCT3030ALGC11 Application Note
ROHM Semiconductor
41 Pages / 0.88 MByte
SCT3030ALGC11 Features Description Parametrics
ROHM Semiconductor
3 Pages / 0.26 MByte

SCT3030 Documents

SCT3030ALGC11 Datasheet PDF
ROHM Semiconductor
Trans MOSFET N-CH SiC 650V 70A 3Pin(3+Tab) TO-247N Tube
SCT3030KLGC11 Datasheet PDF
ROHM Semiconductor
Trans MOSFET N-CH SiC 1.2kV 72A 3Pin(3+Tab) TO-247N Tube
SCT3030ARC14 Datasheet PDF
ROHM Semiconductor
SICFET N-CH 650V 70A TO247-4L
SCT3030AL Datasheet PDF
ROHM Semiconductor
Silicon Carbide Power MOSFET, N Channel, 70A, 650V, 0.03Ω, 18V, 5.6V
SCT3030KL Datasheet PDF
ROHM Semiconductor
Silicon Carbide Power MOSFET, N Channel, 72A, 1.2kV, 0.03Ω, 18V, 5.6V
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