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Part Datasheet Search > MOSFETs > ROHM Semiconductor > SCT3040KLGC11 Datasheet PDF
SCT3040KLGC11
$ 17.218
SCT3040KLGC11 Datasheet PDF (15 Pages)
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SCT3040KLGC11 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
40 mΩ
Power Dissipation
262 W
Threshold Voltage
5.6 V
Drain to Source Voltage (Vds)
1200 V
Breakdown Voltage (Drain to Source)
1200 V
Rise Time
39 ns
Input Capacitance (Ciss)
1337pF @800V(Vds)
Fall Time
24 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
262W (Tc)

SCT3040KLGC11 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16 mm
Operating Temperature
175℃ (TJ)

SCT3040KLGC11 Documents

ROHM Semiconductor
15 Pages / 0.49 MByte
ROHM Semiconductor
15 Pages / 0.49 MByte
ROHM Semiconductor
41 Pages / 0.88 MByte
ROHM Semiconductor
3 Pages / 0.26 MByte

SCT3040 Documents

ROHM Semiconductor
Trans MOSFET N-CH SiC 1.2kV 55A 3Pin(3+Tab) TO-247N Tube
ROHM Semiconductor
Trans MOSFET N-CH SiC 1.2KV 55A Tube
ROHM Semiconductor
Silicon Carbide Power MOSFET, N Channel, 55A, 1.2kV, 0.04Ω, 18V, 5.6V
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