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Part Datasheet Search > IGBTs > Infineon > SGB10N60AATMA1 Datasheet PDF
SGB10N60AATMA1
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SGB10N60AATMA1 Datasheet PDF (11 Pages)
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SGB10N60AATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
92000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
92 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
92000 mW

SGB10N60AATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SGB10N60AATMA1 Documents

Infineon
11 Pages / 0.77 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
6 Pages / 0.05 MByte

SGB10N60 Documents

Infineon
IGBT 600V 20A 92W TO263-3
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin TO-263 T/R
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin(2+Tab) TO-263
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin(2+Tab) TO-263
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