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Part Datasheet Search > IGBTs > Infineon > SGD02N120BUMA1 Datasheet PDF
SGD02N120BUMA1
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SGD02N120BUMA1 Datasheet PDF (13 Pages)
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SGD02N120BUMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Power Dissipation
62 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
62 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
62000 mW

SGD02N120BUMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SGD02N120BUMA1 Documents

Infineon
13 Pages / 0.36 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

SGD02N120 Documents

Infineon
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3Pin(2+Tab) DPAK T/R
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