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SGD02N60BUMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

IGBTs

Case Package:

TO-252-3

Description:

Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(2+Tab) DPAK T/R

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

SGD02N60BUMA1 Datasheet (12 Pages)SGD02N60BUMA1 User Reference Manual Guide (270 Pages)SGD02N60BUMA1 Application Note (48 Pages)

SGD02N60BUMA1 Datasheet PDF (12 Pages)

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SGD02N60BUMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Power Dissipation

30000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Input Power (Max)

30 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

30000 mW

View Datasheet >

SGD02N60BUMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

SGD02N60BUMA1 Environmental

SGD02N60BUMA1 Function Overview

SGD02N60BUMA1 Documents

SGD02N60BUMA1 Datasheet

Infineon

12 Pages / 0.34 MByte

SGD02N60BUMA1 User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

SGD02N60BUMA1 Other Datasheet PDF

Infineon

73 Pages / 2.93 MByte

SGD02N60BUMA1 Application Note

Infineon

48 Pages / 2 MByte

SGD02N60 Documents

SGD02N60 Datasheet PDF

Infineon

Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(2+Tab) DPAK T/R

SGD02N60 Datasheet PDF

Feeling

IGBT 600V 6A 30W TO252-3

SGD02N60 Datasheet PDF

Siemens Semiconductor

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA

SGD02N60BUMA1 Datasheet PDF

Infineon

Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(2+Tab) DPAK T/R

SGD02N60XT Datasheet PDF

Infineon

Trans IGBT Chip N-CH 600V 6A 3Pin(2+Tab) TO-252

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