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SGF80N60UFTU Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-3-3

Description:

IGBT 600V 80A 110W TO3PF

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SGF80N60UFTU Datasheet PDF (2 Pages)

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SGF80N60UFTU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Power Dissipation

110000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Input Power (Max)

110 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

110000 mW

SGF80N60UFTU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not For New Designs

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

SGF80N60UFTU Environmental

SGF80N60UFTU Export Classifications

SGF80N60UFTU Function Overview

SGF80N60UFTU Documents

SGF80N60UFTU Other Datasheet PDF

ON Semiconductor

2 Pages / 0.13 MByte

SGF80N60UFTU Notice File

ON Semiconductor

18 Pages / 3.05 MByte

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SGF80N60UFTU Datasheet PDF

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Trans IGBT Chip N-CH 600V 80A 110000mW 3Pin(3+Tab) TO-3pF Rail

SGF80N60UFTU Datasheet PDF

ON Semiconductor

IGBT 600V 80A 110W TO3PF

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