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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI1012CR-T1-GE3 Datasheet PDF
SI1012CR-T1-GE3
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SI1012CR-T1-GE3 Datasheet PDF (8 Pages)
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SI1012CR-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-75
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.33 Ω
Polarity
N-Channel
Power Dissipation
240 mW
Threshold Voltage
400 mV
Drain to Source Voltage (Vds)
20 V
Rise Time
16 ns
Input Capacitance (Ciss)
43pF @10V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
0.24 W

SI1012CR-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
1.68 mm
Size-Width
0.86 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃

SI1012CR-T1-GE3 Documents

Vishay Semiconductor
8 Pages / 0.16 MByte
Vishay Semiconductor
8 Pages / 0.16 MByte

SI1012CRT1 Documents

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SOT-523-3 N-CH 20V 630mA 330mΩ
Vishay Siliconix
MOSFET N-CH 20V 0.63A SC-75A
Vishay Semiconductor
Trans MOSFET N-CH 20V 0.63A 3Pin SC-75A T/R
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