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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI1031R-T1-GE3 Datasheet PDF
SI1031R-T1-GE3
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SI1031R-T1-GE3 Datasheet PDF (7 Pages)
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SI1031R-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-75
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
8 Ω
Polarity
P-Channel
Power Dissipation
250 mW
Threshold Voltage
900 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
140 mA
Rise Time
30 ns
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
0.25 W

SI1031R-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
1.68 mm
Size-Width
0.86 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃

SI1031R-T1-GE3 Documents

Vishay Semiconductor
7 Pages / 0.12 MByte
Vishay Semiconductor
8 Pages / 0.11 MByte

SI1031RT1 Documents

VISHAY
SC-75A P-CH 20V 0.14A
Vishay Siliconix
VISHAY
SC-75-3P-CH 20V 140mA 20Ω
Vishay Siliconix
TRANSISTOR 140mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3Pin, FET General Purpose Small Signal
Vishay Semiconductor
Trans MOSFET P-CH 20V 0.14A 3Pin SC-75A T/R
VISHAY
MOSFET P-CH 20V 0.14A SC-75A
Vishay Siliconix
MOSFET P-CH 20V 0.14A SC-75A
Vishay Semiconductor
MOSFET P-CH 20V 0.14A SC-75A
Vishay Intertechnology
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