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SI2300DS-T1-GE3
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SI2300DS-T1-GE3 Datasheet PDF (7 Pages)
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SI2300DS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.055 Ω
Polarity
N-CH
Power Dissipation
1.1 W
Threshold Voltage
600 mV
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
3.6A
Rise Time
15 ns
Input Capacitance (Ciss)
320pF @15V(Vds)
Input Power (Max)
1.7 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃

SI2300DS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2300DS-T1-GE3 Documents

VISHAY
7 Pages / 0.11 MByte
VISHAY
10 Pages / 0.19 MByte
VISHAY
2 Pages / 0.09 MByte

SI2300DST1 Documents

VISHAY
SOT-23-3 N-CH 30V 3.6A 55mΩ
Vishay Siliconix
MOSFET N-CH 30V 3.6A SOT-23
Vishay Semiconductor
Trans MOSFET N-CH 30V 3.1A 3Pin SOT-23 T/R
Vishay Intertechnology
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