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SI2301BDS-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOT-23

Description:

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

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Documentation:

SI2301BDS-T1-E3 Datasheet (2 Pages)

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SI2301BDS-T1-E3 Datasheet PDF (2 Pages)

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SI2301BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

100 mΩ

Polarity

P-Channel

Power Dissipation

900 mW

Drain to Source Voltage (Vds)

-20.0 V

Continuous Drain Current (Ids)

-2.20 A

Input Capacitance (Ciss)

375pF @6V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

0.7 W

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SI2301BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

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SI2301BDS-T1-E3 Environmental

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