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SI2301BDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOT-23

Description:

Trans MOSFET P-CH 20V 2.2A 3Pin SOT-23 T/R

Pictures:

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Documentation:

SI2301BDS-T1-GE3 Datasheet (9 Pages)

SI2301BDS-T1-GE3 Datasheet PDF (9 Pages)

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SI2301BDS-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

SOT-23

Drain to Source Resistance (on) (Rds)

0.08 Ω

Polarity

P-Channel

Power Dissipation

700 mW

Drain to Source Voltage (Vds)

-20.0 V

Continuous Drain Current (Ids)

-2.20 A

Rise Time

40 ns

Fall Time

20 ns

Operating Temperature (Max)

150 ℃

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SI2301BDS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Operating Temperature

-55℃ ~ 150℃

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SI2301BDS-T1-GE3 Environmental

SI2301BDS-T1-GE3 Documents

SI2301BDS-T1-GE3 Datasheet

Vishay Semiconductor

9 Pages / 0.2 MByte

SI2301BDS-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

9 Pages / 0.2 MByte

SI2301BDS-T1-GE3 Notice File

Vishay Semiconductor

2 Pages / 0.09 MByte

SI2301BDST1 Documents

SI2301BDS-T1 Datasheet PDF

VISHAY

SOT-23P-CH 20V 2.2A

SI2301BDS-T1-E3 Datasheet PDF

VISHAY

SOT-23-3P-CH 20V 2.2A 100mΩ

SI2301BDS-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

SI2301BDS-T1-GE3 Datasheet PDF

VISHAY

SOT-23-3P-CH 20V 2.2A 100mΩ

SI2301BDS-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

SI2301BDS-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 20V 2.2A 3Pin SOT-23 T/R

SI2301BDS-T1-GE3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R

SI2301BDS-T1-E3 Datasheet PDF

Vishay Intertechnology

SI2301BDS-T1-GE3 Datasheet PDF

Vishay Intertechnology

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