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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI2301CDS-T1-GE3 Datasheet PDF
SI2301CDS-T1-GE3
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SI2301CDS-T1-GE3 Datasheet PDF (6 Pages)
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SI2301CDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Power Rating
1.6 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.142 Ω
Polarity
P-Channel
Power Dissipation
1.6 W
Drain to Source Voltage (Vds)
-20.0 V
Continuous Drain Current (Ids)
-3.10 A
Rise Time
35 ns
Input Capacitance (Ciss)
405pF @10V(Vds)
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
860 mW

SI2301CDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃

SI2301CDS-T1-GE3 Documents

Vishay Semiconductor
6 Pages / 0.09 MByte
Vishay Semiconductor
9 Pages / 0.19 MByte
Vishay Semiconductor
2 Pages / 0.09 MByte

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