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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI2302ADS-T1-E3 Datasheet PDF
SI2302ADS-T1-E3
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SI2302ADS-T1-E3 Datasheet PDF (2 Pages)
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SI2302ADS-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Drain to Source Resistance (on) (Rds)
0.045 Ω
Polarity
N-Channel
Power Dissipation
0.7 W
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Continuous Drain Current (Ids)
2.40 A, 2.10 A
Rise Time
80 ns
Output Power
700 mW
Thermal Resistance
140℃/W (RθJA)
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI2302ADS-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI2302ADS-T1-E3 Documents

Vishay Semiconductor
2 Pages / 0.06 MByte
Vishay Semiconductor
8 Pages / 0.19 MByte

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MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ω; ID 2.1A; TO-236 (SOT-23); PD 0.7W
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Trans MOSFET N-CH 20V 2.1A 3Pin SOT-23 T/R
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