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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI2302ADS-T1-GE3 Datasheet PDF
SI2302ADS-T1-GE3
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SI2302ADS-T1-GE3 Datasheet PDF (8 Pages)
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SI2302ADS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
45 mΩ
Polarity
N-Channel
Power Dissipation
700 mW
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
2.10 A
Input Capacitance (Ciss)
300pF @10V(Vds)
Power Dissipation (Max)
700mW (Ta)

SI2302ADS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI2302ADS-T1-GE3 Documents

Vishay Siliconix
8 Pages / 0.19 MByte

SI2302ADST1 Documents

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MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ω; ID 2.1A; TO-236 (SOT-23); PD 0.7W
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Trans MOSFET N-CH 20V 2.1A 3Pin SOT-23 T/R
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