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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI2302ADS-T1-GE3 Datasheet PDF
SI2302ADS-T1-GE3
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SI2302ADS-T1-GE3 Datasheet PDF (8 Pages)
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SI2302ADS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
45 mΩ
Polarity
N-Channel
Power Dissipation
700 mW
Threshold Voltage
950 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
2.10 A
Operating Temperature (Max)
150 ℃

SI2302ADS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown

SI2302ADS-T1-GE3 Documents

Vishay Semiconductor
8 Pages / 0.19 MByte
Vishay Semiconductor
8 Pages / 0.19 MByte
Vishay Semiconductor
2 Pages / 0.03 MByte

SI2302ADST1 Documents

Vishay Siliconix
MOSFET N-CH 20V 2.1A SOT23-3
VISHAY
Trans MOSFET N-CH 20V 2.1A 3Pin SOT-23 T/R
Vishay Semiconductor
Trans MOSFET N-CH 20V 2.1A 3Pin SOT-23 T/R
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY
SOT-23 N-CH 20V 2.1A
VISHAY
Trans MOSFET N-CH 20V 2.1A 3Pin TO-236 T/R
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ω; ID 2.1A; TO-236 (SOT-23); PD 0.7W
Vishay Siliconix
MOSFET 20V 2.4A 0.9W 60mohm @ 4.5V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ω; ID 2.1A; TO-236 (SOT-23); PD 0.7W
Vishay Semiconductor
Trans MOSFET N-CH 20V 2.1A 3Pin SOT-23 T/R
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