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Part Datasheet Search > MOSFETs > VISHAY > SI2303CDS-T1-GE3 Datasheet PDF
SI2303CDS-T1-GE3
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SI2303CDS-T1-GE3 Datasheet PDF (10 Pages)
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SI2303CDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.158 Ω
Polarity
P-Channel
Power Dissipation
2.3 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
-2.70 A
Rise Time
37 ns
Input Capacitance (Ciss)
155pF @15V(Vds)
Input Power (Max)
2.3 W
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000 mW

SI2303CDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2303CDS-T1-GE3 Documents

VISHAY
10 Pages / 0.22 MByte
VISHAY
11 Pages / 0.22 MByte
VISHAY
2 Pages / 0.09 MByte

SI2303CDST1 Documents

VISHAY
SOT-23-3P-CH 30V 1.9A 190mΩ
Vishay Siliconix
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
Vishay Semiconductor
Trans MOSFET P-CH 30V 1.9A 3Pin SOT-23 T/R
VISHAY
SOT-23-3P-CH 30V 1.9A 190mΩ
Vishay Siliconix
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
Vishay Semiconductor
Trans MOSFET P-CH 30V 1.9A 3Pin SOT-23 T/R
Vishay Siliconix
MOSFET P-CH 30V 1.9A/2.7A SOT23
Vishay Intertechnology
Vishay Intertechnology
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