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SI2304BDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-236

Description:

Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R

Pictures:

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Documentation:

SI2304BDS-T1-GE3 Datasheet (8 Pages)

Package Outline Dimension on5 Page 6 Page

Part Numbering System on1 Page

SI2304BDS-T1-GE3 Datasheet PDF (8 Pages)

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SI2304BDS-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-236

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.105 Ω

Polarity

N-Channel

Power Dissipation

750 mW

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

3.20 A

Rise Time

12.5 ns

Input Capacitance (Ciss)

225pF @15V(Vds)

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

750 mW

View Datasheet >

SI2304BDS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tape & Reel (TR)

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI2304BDS-T1-GE3 Environmental

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SI2304BDS-T1-GE3 Datasheet

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SI2304BDS-T1-GE3 Notice File

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Vishay Siliconix

TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal

SI2304BDS-T1-E3 Datasheet PDF

Vishay Semiconductor

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SI2304BDS-T1-GE3 Datasheet PDF

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Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R

SI2304BDS-T1-GE3 Datasheet PDF

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