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Part Datasheet Search > MOSFETs > VISHAY > SI2305CDS-T1-GE3 Datasheet PDF
SI2305CDS-T1-GE3
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SI2305CDS-T1-GE3 Datasheet PDF (10 Pages)
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SI2305CDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.028 Ω
Polarity
P-Channel
Power Dissipation
1.7 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
8 V
Continuous Drain Current (Ids)
4.4A
Rise Time
20 ns
Input Capacitance (Ciss)
960pF @4V(Vds)
Input Power (Max)
1.7 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
960 mW

SI2305CDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2305CDS-T1-GE3 Documents

VISHAY
10 Pages / 0.21 MByte
VISHAY
11 Pages / 0.22 MByte
VISHAY
2 Pages / 0.09 MByte

SI2305CDST1 Documents

VISHAY
SOT-23-3P-CH 8V 4.4A 28mΩ
Vishay Siliconix
VISHAY SI2305CDS-T1-GE3 MOSFET Transistor, P Channel, -5.8A, -8V, 0.028Ω, -4.5V, -1V
Vishay Semiconductor
Trans MOSFET P-CH 8V 4.4A 3Pin SOT-23 T/R
Vishay Intertechnology
P-CHANNEL 8 V (D-S) MOSFET
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