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Part Datasheet Search > MOSFETs > VISHAY > SI2306BDS-T1-E3 Datasheet PDF
SI2306BDS-T1-E3
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SI2306BDS-T1-E3 Datasheet PDF (5 Pages)
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SI2306BDS-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.038 Ω
Polarity
N-Channel
Power Dissipation
1.25 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
3.16 A
Rise Time
12 ns
Input Capacitance (Ciss)
305pF @15V(Vds)
Input Power (Max)
750 mW
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1250 mW

SI2306BDS-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2306BDS-T1-E3 Documents

VISHAY
5 Pages / 0.1 MByte
VISHAY
10 Pages / 0.24 MByte
VISHAY
2 Pages / 0.09 MByte

SI2306BDST1 Documents

VISHAY
SOT-23-3 N-CH 30V 3.16A 47mΩ
Vishay Semiconductor
MOSFET, N-Ch., 30V(D-S), 0.047Ω @ 10V(GS), 4A, TO-236 (SOT-23)
VISHAY
SOT-23-3 N-CH 30V 3.16A 47mΩ
Vishay Siliconix
MOSFET, N-Ch., 30V(D-S), 0.047Ω @ 10V(GS), 4A, TO-236 (SOT-23)
Vishay Siliconix
Trans MOSFET N-CH 30V 3.16A 3Pin TO-236 T/R
Vishay Semiconductor
MOSFET 30V 4A 1.25W 47mohm @ 4.5V
Vishay Intertechnology
Vishay Intertechnology
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