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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI2307CDS-T1-GE3 Datasheet PDF
SI2307CDS-T1-GE3
$ 2.671
SI2307CDS-T1-GE3 Datasheet PDF (10 Pages)
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SI2307CDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.073 Ω
Polarity
P-Channel
Power Dissipation
1.1 W
Drain to Source Voltage (Vds)
-30.0 V
Continuous Drain Current (Ids)
-2.70 A
Rise Time
40 ns
Fall Time
17 ns
Operating Temperature (Max)
150 ℃

SI2307CDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.45 mm
Operating Temperature
-55℃ ~ 150℃

SI2307CDS-T1-GE3 Documents

Vishay Semiconductor
10 Pages / 0.2 MByte
Vishay Semiconductor
9 Pages / 0.2 MByte
Vishay Semiconductor
2 Pages / 0.09 MByte

SI2307CDST1 Documents

VISHAY
SOT-23-3P-CH 30V 2.7A 880mΩ
VISHAY
SOT-23-3P-CH 30V 2.7A 880mΩ
Vishay Siliconix
TRANSISTOR 3500mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
Vishay Siliconix
Trans MOSFET P-CH 30V 2.7A 3Pin SOT-23 T/R
Vishay Semiconductor
MOSFET 30V 2.7A 1.8W 88mohms @ 10V
Vishay Semiconductor
Trans MOSFET P-CH 30V 2.7A 3Pin SOT-23 T/R
Vishay Intertechnology
Vishay Intertechnology
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