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SI2308BDS-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3 N-CH 60V 1.9A 156mΩ

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Documentation:

SI2308BDS-T1-GE3 Datasheet (9 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on1 Page

SI2308BDS-T1-GE3 Datasheet PDF (9 Pages)

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SI2308BDS-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.13 Ω

Polarity

N-Channel

Power Dissipation

1.09 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

2.30 A

Rise Time

16 ns

Maximum Forward Voltage (Max)

1.2 V

Input Capacitance (Ciss)

190pF @30V(Vds)

Input Power (Max)

1.66 W

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.09W (Ta), 1.66W (Tc)

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SI2308BDS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI2308BDS-T1-GE3 Environmental

SI2308BDS-T1-GE3 Export Classifications

SI2308BDS-T1-GE3 Function Overview

SI2308BDS-T1-GE3 Documents

SI2308BDS-T1-GE3 Datasheet

VISHAY

9 Pages / 0.21 MByte

SI2308BDS-T1-GE3 Other Datasheet PDF

VISHAY

11 Pages / 0.24 MByte

SI2308BDS-T1-GE3 Notice File

VISHAY

2 Pages / 0.09 MByte

SI2308BDST1 Documents

SI2308BDS-T1 Datasheet PDF

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