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Part Datasheet Search > MOSFETs > VISHAY > SI2309CDS-T1-GE3 Datasheet PDF
SI2309CDS-T1-GE3
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SI2309CDS-T1-GE3 Datasheet PDF (8 Pages)
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SI2309CDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.285 Ω
Polarity
P-Channel
Power Dissipation
1 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
1.2A
Rise Time
35 ns
Input Capacitance (Ciss)
210pF @30V(Vds)
Input Power (Max)
1.7 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1 W

SI2309CDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.45 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2309CDS-T1-GE3 Documents

VISHAY
8 Pages / 0.16 MByte
VISHAY
72 Pages / 2.35 MByte
VISHAY
2 Pages / 0.09 MByte

SI2309CDST1 Documents

VISHAY
SOT-23-3P-CH 60V 1.2A 345mΩ
Vishay Siliconix
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W
Vishay Semiconductor
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W
VISHAY
SOT-23-3P-CH 60V 1.2A 345mΩ
Vishay Siliconix
60V 1.6A 1.7W 345mohm @ 10V
Vishay Semiconductor
Trans MOSFET P-CH 60V 1.2A 3Pin SOT-23 T/R
Vishay Intertechnology
Vishay Intertechnology
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