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Part Datasheet Search > MOSFETs > VISHAY > SI2312BDS-T1-GE3 Datasheet PDF
SI2312BDS-T1-GE3
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SI2312BDS-T1-GE3 Datasheet PDF (7 Pages)
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SI2312BDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
31 mΩ
Polarity
N-Channel
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
5.00 A
Rise Time
30 ns
Reverse recovery time
13 ns
Maximum Forward Voltage (Max)
1.2 V
Input Power (Max)
750 mW
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
1250 mW

SI2312BDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2312BDS-T1-GE3 Documents

VISHAY
7 Pages / 0.17 MByte
VISHAY
9 Pages / 0.2 MByte
VISHAY
5 Pages / 0.1 MByte

SI2312BDST1 Documents

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SOT-23-3 N-CH 20V 3.9A 31mΩ
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SOT-23-3 N-CH 20V 3.9A 31mΩ
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TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
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Trans MOSFET N-CH 20V 3.9A 3Pin TO-236 T/R
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Trans MOSFET N-CH 20V 3.9A 3Pin SOT-23 T/R
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