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SI2315BDS-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOT-23

Description:

MOSFET, Power; P-Channel; -12V; 8V; 3.5A; 1.25W; -55 to 150℃

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Documentation:

SI2315BDS-T1-E3 Datasheet (5 Pages)

SI2315BDS-T1-E3 Datasheet PDF (5 Pages)

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SI2315BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23

Power Rating

750 mW

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.04 Ω

Polarity

P-Channel

Power Dissipation

750 mW

Input Capacitance

715pF @6V

Drain to Source Voltage (Vds)

-12.0 V

Breakdown Voltage (Gate to Source)

±8.00 V

Continuous Drain Current (Ids)

-3.00 A

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

SI2315BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Cut Tape (CT)

Size-Length

3.04 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃

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SI2315BDS-T1-E3 Environmental

SI2315BDS-T1-E3 Function Overview

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