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SI2315BDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOT-23

Description:

Trans MOSFET P-CH 12V 3A 3Pin SOT-23 T/R

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SI2315BDS-T1-GE3 Datasheet PDF (9 Pages)

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SI2315BDS-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.04 Ω

Polarity

P-Channel

Power Dissipation

750 mW

Drain to Source Voltage (Vds)

-12.0 V

Continuous Drain Current (Ids)

-3.00 A

Rise Time

35 ns

Fall Time

50 ns

Operating Temperature (Max)

150 ℃

SI2315BDS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Operating Temperature

-55℃ ~ 150℃

SI2315BDS-T1-GE3 Environmental

SI2315BDS-T1-GE3 Documents

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9 Pages / 0.2 MByte

SI2315BDS-T1-GE3 Notice File

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2 Pages / 0.09 MByte

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