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Part Datasheet Search > MOSFETs > VISHAY > SI2318CDS-T1-GE3 Datasheet PDF
SI2318CDS-T1-GE3
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SI2318CDS-T1-GE3 Datasheet PDF (10 Pages)
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SI2318CDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.036 Ω
Polarity
N-Channel
Power Dissipation
1.25 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
5.6A
Reverse recovery time
15 ns
Maximum Forward Voltage (Max)
1.2 V
Input Capacitance (Ciss)
340pF @20V(Vds)
Input Power (Max)
2.1 W
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
2.1 W

SI2318CDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI2318CDS-T1-GE3 Documents

VISHAY
10 Pages / 0.22 MByte
VISHAY
10 Pages / 0.23 MByte

SI2318CDST1 Documents

VISHAY
SOT-23-3 N-CH 40V 5.6A 35mΩ
Vishay Siliconix
MOSFET N-CH 40V 5.6A SOT-23
Vishay Semiconductor
Trans MOSFET N-CH 40V 4.3A 3Pin SOT-23 T/R
Vishay Intertechnology
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