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SI2328DS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3 N-CH 100V 1.5A 250mΩ

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SI2328DS-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on5 Page 6 Page

Part Numbering System on1 Page

SI2328DS-T1-E3 Datasheet PDF (8 Pages)

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SI2328DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

250 mΩ

Polarity

N-Channel

Power Dissipation

730 mW

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

1.50 A, 1.15 A

Rise Time

11 ns

Input Power (Max)

730 mW

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

730 mW

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SI2328DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI2328DS-T1-E3 Environmental

SI2328DS-T1-E3 Function Overview

SI2328DS-T1-E3 Documents

SI2328DS-T1-E3 Datasheet

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8 Pages / 0.19 MByte

SI2328DS-T1-E3 Other Datasheet PDF

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10 Pages / 0.19 MByte

SI2328DS-T1-E3 Notice File

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2 Pages / 0.09 MByte

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