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SI2337DS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3P-CH 80V 1.2A 270mΩ

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SI2337DS-T1-E3 Datasheet (10 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page

SI2337DS-T1-E3 Datasheet PDF (10 Pages)

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SI2337DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.216 Ω

Polarity

P-Channel

Power Dissipation

0.76 W

Drain to Source Voltage (Vds)

80 V

Continuous Drain Current (Ids)

-2.20 A

Rise Time

15 ns

Input Capacitance (Ciss)

500pF @40V(Vds)

Input Power (Max)

2.5 W

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-50 ℃

Power Dissipation (Max)

760 mW

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SI2337DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Minimum Packing Quantity

3000

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SI2337DS-T1-E3 Environmental

SI2337DS-T1-E3 Function Overview

SI2337DS-T1-E3 Documents

SI2337DS-T1-E3 Datasheet

VISHAY

10 Pages / 0.22 MByte

SI2337DS-T1-E3 Other Datasheet PDF

VISHAY

10 Pages / 0.19 MByte

SI2337DS-T1-E3 Notice File

VISHAY

2 Pages / 0.09 MByte

SI2337DST1 Documents

SI2337DS-T1-GE3 Datasheet PDF

VISHAY

SOT-23-3P-CH 80V 1.2A 270mΩ

SI2337DS-T1-E3 Datasheet PDF

VISHAY

SOT-23-3P-CH 80V 1.2A 270mΩ

SI2337DS-T1-E3 Datasheet PDF

Vishay Siliconix

TRANS MOSFET P-CH 80V 1.2A 3Pin TO-236T/R

SI2337DS-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 80V 1.2A 3Pin SOT-23 T/R

SI2337DS-T1-E3 Datasheet PDF

Vishay Semiconductor

TRANS MOSFET P-CH 80V 1.2A 3Pin TO-236T/R

SI2337DS-T1-GE3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 80V 1.2A 3Pin SOT-23 T/R

SI2337DS-T1-GE3 Datasheet PDF

Vishay Intertechnology

SI2337DS-T1-E3 Datasheet PDF

Vishay Intertechnology

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