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SI3443DV Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

FAIRCHILD SEMICONDUCTOR SI3443DV MOSFET Transistor, P Channel, -4A, -20V, 0.054Ω, -4.5V, -700mV

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Documentation:

SI3443DV Datasheet (7 Pages)

Package Outline Dimension on2 Page

Part Numbering System on2 Page 7 Page

SI3443DV Datasheet PDF (7 Pages)

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SI3443DV Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOT-23-6

Number of Channels

1 Channel

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.054 Ω

Polarity

P-Channel

Power Dissipation

1.6 W

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Gate to Source)

±8.00 V

Continuous Drain Current (Ids)

-4.00 A

Rise Time

19 ns

Input Capacitance (Ciss)

640pF @10V(Vds)

Input Power (Max)

800 mW

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.6W (Ta)

View Datasheet >

SI3443DV Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Width

1.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI3443DV Environmental

SI3443DV Export Classifications

SI3443DV Function Overview

SI3443DV Documents

SI3443DV Datasheet

Fairchild

7 Pages / 0.2 MByte

SI3443DV Other Datasheet PDF

Fairchild

10 Pages / 0.86 MByte

SI3443DV Features Description Parametrics

Fairchild

5 Pages / 0.1 MByte

SI3443DV Product Catalog

Fairchild

5 Pages / 0.1 MByte

SI3443DV Other References

Fairchild

1 Pages / 0.14 MByte

SI3443 Documents

SI3443DV Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR SI3443DV MOSFET Transistor, P Channel, -4A, -20V, 0.054Ω, -4.5V, -700mV

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