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Part Datasheet Search > MOSFETs > VISHAY > SI4134DY-T1-GE3 Datasheet PDF
SI4134DY-T1-GE3
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SI4134DY-T1-GE3 Datasheet PDF (9 Pages)
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SI4134DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0115 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
14A
Input Capacitance (Ciss)
846pF @15V(Vds)
Input Power (Max)
5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5 W

SI4134DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI4134DY-T1-GE3 Documents

VISHAY
9 Pages / 0.22 MByte
VISHAY
10 Pages / 0.22 MByte
VISHAY
3 Pages / 0.08 MByte

SI4134DYT1 Documents

VISHAY
SOIC-8 N-CH 30V 14A 14mΩ
Vishay Semiconductor
Trans MOSFET N-CH 30V 9.9A 8Pin SOIC N T/R
VISHAY
SOIC-8 N-CH 30V 14A 14.5mΩ
Vishay Siliconix
VISHAY SI4134DY-T1-GE3 MOSFET Transistor, N Channel, 14A, 30V, 11.5mohm, 10V, 1.8V
Vishay Siliconix
MOSFET N-CH 30V 14A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 9.9A 8Pin SOIC N
Vishay Intertechnology
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8
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