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Part Datasheet Search > MOSFETs > VISHAY > SI4410BDY-T1-GE3 Datasheet PDF
SI4410BDY-T1-GE3
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$ 1.942
SI4410BDY-T1-GE3 Datasheet PDF (8 Pages)
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SI4410BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.02 Ω
Polarity
N-CH
Power Dissipation
2.5 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
7.5A
Rise Time
10 ns
Input Power (Max)
1.4 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

SI4410BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Minimum Packing Quantity
2500

SI4410BDY-T1-GE3 Documents

VISHAY
8 Pages / 0.15 MByte
VISHAY
14 Pages / 0.19 MByte

SI4410BDYT1 Documents

VISHAY
SOIC-8 N-CH 30V 7.5A 13.5mΩ
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SOIC-8 N-CH 30V 7.5A 13.5mΩ
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Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
Vishay Siliconix
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Vishay Siliconix
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
Vishay Intertechnology
Vishay Intertechnology
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