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SI4420BDY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55

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Documentation:

SI4420BDY-T1-E3 Datasheet (4 Pages)

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SI4420BDY-T1-E3 Datasheet PDF (4 Pages)

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SI4420BDY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Forward Voltage

750 mV

Drain to Source Resistance (on) (Rds)

0.007 Ω

Polarity

N-Channel

Power Dissipation

1.4 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30 V

Rise Time

11 ns

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1400 mW

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SI4420BDY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

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SI4420BDY-T1-E3 Environmental

SI4420BDY-T1-E3 Function Overview

SI4420BDY-T1-E3 Documents

SI4420BDY-T1-E3 Datasheet

Vishay Semiconductor

4 Pages / 0.37 MByte

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SI4420BDY-T1-E3 Datasheet PDF

VISHAY

SOIC-8 N-CH 30V 9.5A 8.5mΩ

SI4420BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55

SI4420BDY-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55

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SI4420BDY-T1-E3 Datasheet PDF

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